| Title:
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Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm |
| Type:
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Journal articleJournal article |
| Participant(s):
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Technical University of Denmark
Email:
Technical University of Denmark
Email:
Technical University of Denmark
Email:
Technical University of Denmark
Technical University of Denmark
Email:
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| Abstract:
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The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 mu m by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 mu m wavelength range is demonstrated. VC 2011 American Institute of Physics. [doi:10.1063/1.3634029] |
| Published:
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in journal: Applied Physics Letters (ISSN: 0003-6951) (DOI: http://dx.doi.org/10.1063/1.3634029), vol: 99, issue: 10, pages: 101106, 2011 |
| DOI:
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