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Title: Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography
Type: Journal articleJournal article
Participant(s):
Author:  Kadkhodazadeh, Shima (Cwisno: 54852)
CEA LETI, France, Minatec Campus
Email:

Forfatter:  Rouviere, Jean-Luc
CEA INAC, France, Minatec Campus

Forfatter:  Béché, Armand
FEI France

Author:  Kadkhodazadeh, Shima (Cwisno: 54852)
Technical University of Denmark
Email:

Author:  Semenova, Elizaveta (Cwisno: 53356)
Technical University of Denmark
Email:

Author:  Yvind, Kresten (Cwisno: 6528)
Technical University of Denmark
Email:

Author:  Dunin-Borkowski, Rafal E. (Cwisno: 37397)
Technical University of Denmark
Email:

Abstract: The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4%60.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
Published: in journal: Applied Physics Letters (ISSN: 0003-6951) (DOI: http://dx.doi.org/10.1063/1.3672194), vol: 99, issue: 26, pages: 261911, 2011
DOI:
File(s):
See the publication in DTU Orbit See the publication in DTU Orbit

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