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Title: In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy
Type: Article in proceedingsArticle in proceedings
Participant(s):
Forfatter:  Ambrosini, S.
Universit degli Studi di Trieste, UNITS

Author:  Wagner, Jakob Birkedal (Cwisno: 43950)
Technical University of Denmark
Email:

Author:  Booth, Tim (Cwisno: 52702)
Technical University of Denmark
Email:

Author:  Savenko, Alexey (Cwisno: 65158)
Technical University of Denmark
Email:

Author:  Fragiacomo, Giulio (Cwisno: 35235)
Technical University of Denmark
Email:

Author:  Bøggild, Peter (Cwisno: 5481)
Technical University of Denmark
Email:

Forfatter:  Rubini, S.
TASC National Laboratory
Abstract: Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment.
Published: part of: In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy, 2011,
File(s):
Presented at: 18. International Symposium. Nanostructures: Physics and Technology, Ekaterinburg, Russia
See the publication in DTU Orbit See the publication in DTU Orbit

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